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| MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 10V DRIVE VDSS ................................................................................ 350V rDS (ON) (MAX) ................................................................ 0.4 ID ............................................................................................ 7A Viso ................................................................................ 2000V GATE DRAIN SOURCE TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200H VGS = 0V VDS = 0V Conditions Ratings 350 30 12 36 12 35 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Aug. 1999 4.5 0.2 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 350V, VGS = 0V ID = 1mA, VDS = 10V Limits Min. 350 30 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.32 1.90 10 1050 150 25 20 30 160 60 1.5 -- Max. -- -- 10 1.0 4.0 0.40 2.40 -- -- -- -- -- -- -- -- 2.0 3.57 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source on-state resistance ID = 6A, VGS = 10V Drain-source on-state voltage ID = 6A, VGS = 10V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50 IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 7 5 3 2 POWER DISSIPATION PD (W) tw = 10s 100s DRAIN CURRENT ID (A) 40 101 7 5 3 2 30 1ms 10ms TC = 25C Single Pulse 100ms 20 100 7 5 3 2 10 101 0 0 50 100 150 200 7 DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS =20V,10V,8V,6V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V,10V,8V,6V Tc = 25C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 Tc = 25C Pulse Test 8 5V 12 5V 6 8 4 PD = 35W 2 4V 4 PD = 35W 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 Tc = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 16 ID = 24A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 0.8 VGS = 20V 10V 12 0.6 8 12A 0.4 4 6A 0.2 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 3 2 12 Tc = 25C VDS = 10V Pulse Test 101 7 5 3 2 TC = 25C 75C 125C 2 3 4 5 7 101 2 3 4 5 7 102 VDS =10V Pulse Test 8 4 0 0 4 8 12 16 20 100 0 10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 5 Ciss 3 SWITCHING CHARACTERISTICS (TYPICAL) 103 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 2 102 7 5 3 2 td(off) tf tr 102 7 5 3 2 Crss Tch = 25C f = 1MHZ VGS = 0V Coss td(on) Tch = 25C VGS = 10V VDD = 150V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102 101 7 5 3 101 5 7 102 2 3 5 7103 7 5 100 23 5 7101 2 3 100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VDS = VGS = 0V Pulse Test TC = 125C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) 50V 100V 200V 16 16 12 Tch = 25C ID =12A 12 75C 8 8 25C 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 4.0 VDS = 10V ID = 1mA 3.0 100 7 5 3 2 VGS = 10V ID = 6A Pulse Test 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 1.2 100 7 5 3 2 1.0 VGS = 0V ID = 1mA 0.8 10-1 7 5 3 2 PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999 CHANNEL TEMPERATURE Tch (C) |
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